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Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide mems-based sensor

Identifieur interne : 009F71 ( Main/Repository ); précédent : 009F70; suivant : 009F72

Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide mems-based sensor

Auteurs : RBID : Pascal:06-0036178

Descripteurs français

Pascal (Inist)
- Effet pression, Capteur de gaz, Dispositif microélectromécanique, Procédé sol gel, Dépôt immersion, Pression atmosphérique, Dispositif couche mince, Nanocristal, Etain oxyde, Indium oxyde, In2O3, SnO2, 0707D.

English descriptors

KwdEn :
- Atmospheric pressure, Dip coating, Gas sensors, Indium oxides, Microelectromechanical device, Nanocrystal, Pressure effects, Sol-gel process, Thin film devices, Tin oxides.

Abstract

Nanocrystalline indium oxide (In₂O₃)-doped tin oxide (SnO₂) thin film sensor has been sol-gel dip-coated on a microelectrochemical system (MEMS) device using a sol-gel dip-coating technique. Hydrogen (H₂) at ppm-level has been successfully detected at room temperature using the present MEMS-based sensor. The room temperature H₂ sensing characteristics (sensitivity, response and recovery time, and recovery rate) of the present MEMS-based sensor has been investigated as a function of air-pressure (50-600 Torr) with and without the ultraviolet (UV) radiation exposure. It has been demonstrated that, the concentration of the surface-adsorbed oxygen-ions (which is related to the sensor-resistance in air), the ppm-level H₂, and the oxygen (O₂) partial pressure are the three major factors, which determine the variation in the room temperature H₂ sensing characteristics of the present MEMS-based sensor as a function of air-pressure.

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Pascal:06-0036178

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide mems-based sensor</title>
<author><name sortKey="Shukia, Satyajit" uniqKey="Shukia S">Satyajit Shukia</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</s1>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ludwig, Lawrence" uniqKey="Ludwig L">Lawrence Ludwig</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Kennedy Space Center, KSC-NASA</s1>
<s2>FL 32899</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Floride</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Cho, Hyoung J" uniqKey="Cho H">Hyoung J. Cho</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</s1>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Duarte, Julian" uniqKey="Duarte J">Julian Duarte</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</s1>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Seal, Sudipta" uniqKey="Seal S">Sudipta Seal</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</s1>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0036178</idno>
<date when="2005">2005</date>
<idno type="stanalyst">PASCAL 06-0036178 INIST</idno>
<idno type="RBID">Pascal:06-0036178</idno>
<idno type="wicri:Area/Main/Corpus">009805</idno>
<idno type="wicri:Area/Main/Repository">009F71</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1533-4880</idno>
<title level="j" type="abbreviated">J. nanosci. nanotechnol. : (Print)</title>
<title level="j" type="main">Journal of nanoscience and nanotechnology : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atmospheric pressure</term>
<term>Dip coating</term>
<term>Gas sensors</term>
<term>Indium oxides</term>
<term>Microelectromechanical device</term>
<term>Nanocrystal</term>
<term>Pressure effects</term>
<term>Sol-gel process</term>
<term>Thin film devices</term>
<term>Tin oxides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet pression</term>
<term>Capteur de gaz</term>
<term>Dispositif microélectromécanique</term>
<term>Procédé sol gel</term>
<term>Dépôt immersion</term>
<term>Pression atmosphérique</term>
<term>Dispositif couche mince</term>
<term>Nanocristal</term>
<term>Etain oxyde</term>
<term>Indium oxyde</term>
<term>In2O3</term>
<term>SnO2</term>
<term>0707D</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Nanocrystalline indium oxide (In<sub>2</sub>
O<sub>3</sub>
)-doped tin oxide (SnO<sub>2</sub>
) thin film sensor has been sol-gel dip-coated on a microelectrochemical system (MEMS) device using a sol-gel dip-coating technique. Hydrogen (H<sub>2</sub>
) at ppm-level has been successfully detected at room temperature using the present MEMS-based sensor. The room temperature H<sub>2</sub>
 sensing characteristics (sensitivity, response and recovery time, and recovery rate) of the present MEMS-based sensor has been investigated as a function of air-pressure (50-600 Torr) with and without the ultraviolet (UV) radiation exposure. It has been demonstrated that, the concentration of the surface-adsorbed oxygen-ions (which is related to the sensor-resistance in air), the ppm-level H<sub>2</sub>
, and the oxygen (O<sub>2</sub>
) partial pressure are the three major factors, which determine the variation in the room temperature H<sub>2</sub>
 sensing characteristics of the present MEMS-based sensor as a function of air-pressure.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1533-4880</s0>
</fA01>
<fA03 i2="1"><s0>J. nanosci. nanotechnol. : (Print)</s0>
</fA03>
<fA05><s2>5</s2>
</fA05>
<fA06><s2>11</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide mems-based sensor</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>SHUKIA (Satyajit)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LUDWIG (Lawrence)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CHO (Hyoung J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>DUARTE (Julian)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SEAL (Sudipta)</s1>
</fA11>
<fA14 i1="01"><s1>Surface Engineering and Nano Fabrication Lab, Advanced Materials Processing and Analysis Center and Mechanical Materials, Aerospace Engineering Department, University of Central Florida</s1>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Kennedy Space Center, KSC-NASA</s1>
<s2>FL 32899</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>1864-1874</s1>
</fA20>
<fA21><s1>2005</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>27580</s2>
<s5>354000135042050150</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>30 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>06-0036178</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of nanoscience and nanotechnology : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Nanocrystalline indium oxide (In<sub>2</sub>
O<sub>3</sub>
)-doped tin oxide (SnO<sub>2</sub>
) thin film sensor has been sol-gel dip-coated on a microelectrochemical system (MEMS) device using a sol-gel dip-coating technique. Hydrogen (H<sub>2</sub>
) at ppm-level has been successfully detected at room temperature using the present MEMS-based sensor. The room temperature H<sub>2</sub>
 sensing characteristics (sensitivity, response and recovery time, and recovery rate) of the present MEMS-based sensor has been investigated as a function of air-pressure (50-600 Torr) with and without the ultraviolet (UV) radiation exposure. It has been demonstrated that, the concentration of the surface-adsorbed oxygen-ions (which is related to the sensor-resistance in air), the ppm-level H<sub>2</sub>
, and the oxygen (O<sub>2</sub>
) partial pressure are the three major factors, which determine the variation in the room temperature H<sub>2</sub>
 sensing characteristics of the present MEMS-based sensor as a function of air-pressure.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B00G07D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Effet pression</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Pressure effects</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Capteur de gaz</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Gas sensors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dispositif microélectromécanique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Microelectromechanical device</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Dispositivo microelectromecánico</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Procédé sol gel</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Sol-gel process</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Dépôt immersion</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Dip coating</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Pression atmosphérique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Atmospheric pressure</s0>
<s5>11</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Dispositif couche mince</s0>
<s5>12</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Thin film devices</s0>
<s5>12</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Etain oxyde</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Tin oxides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium oxides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>SnO2</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>0707D</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fN21><s1>009</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide mems-based sensor

Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide mems-based sensor

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri